Raman scattering as a probe of the electronic structure of single‐wall carbon nanotubes under high pressure

dc.contributor.author	Terekhov, S. V.
dc.contributor.author	Obraztsova, E. D.
dc.contributor.author	Hochheimer, H. D.
dc.contributor.author	Teredesai, Pallavi V.
dc.contributor.author	Yarger, J. L.
dc.contributor.author	Osadchy, A. V.
dc.date.accessioned	2016-03-09T06:22:55Z
dc.date.available	2016-03-09T06:22:55Z
dc.date.issued	2005
dc.identifier.uri	http://localhost:8080/xmlui/handle/123456789/85
dc.description	AIP Conf. Proc. 786, 166 (2005); http://dx.doi.org/10.1063/1.2103844 Conference date: 12-19 March 2005 Location: Kirchberg, Tirol (Austria)	en_US
dc.language.iso	en	en_US
dc.publisher	American Institute of Physics	en_US
dc.subject	Carbon nanotubes	en_US
dc.subject	Diamond anvil cells	en_US
dc.subject	Electronic structure	en_US
dc.subject	High pressure	en_US
dc.subject	Raman scattering	en_US
dc.title	Raman scattering as a probe of the electronic structure of single‐wall carbon nanotubes under high pressure	en_US
dc.type	Article	en_US